BA277-01

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D749 BA277-01 Band-switching diode Product specification Supersedes data of 2001 Sep 07 2002 Oct 29 Philips Semiconductors Product specification Band-switching diode FEATURES Small plastic SMD package Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.2 pF Low diode forward resistance: max. 0.7 Ω. APPLICATIONS Low loss band switching in VHF television tuners Surface mount band-switching circuits. DESCRIPTION Planar high performance band-switching diode in a small SOD723 SMD plastic package. PINNING BA277-01 handbook, halfpage Marking code: M2. Fig.1 
PIN 1 2 1 Top view DESCRIPTION cathode anode 2 MAM399 Simplified outline (SOD723) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS − − − −65 −65 MIN. MAX. 35 100 315 +150 +150 V mA mW °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd rD Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 190 UNIT K/W PARAMETER forward voltage reverse current diode capacitance diode forward resistance IF = 10 mA VR = 25 V VR = ...