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SE2529L Dataheets PDF



Part Number SE2529L
Manufacturers SiGe Semiconductor
Logo SiGe Semiconductor
Description Power Amplifier
Datasheet SE2529L DatasheetSE2529L Datasheet (PDF)

www.DataSheet4U.com SE2529L RangeCharger™ 2.4GHz Power Amplifier Applications ƒ ƒ ƒ ƒ DSSS 2.4GHz WLAN (IEEE 802.11b) OFDM 2.4GHz WLAN (IEEE 802.11g) Access Points, PCMCIA, PC cards 2.4GHz cordless telephones Product Description The SE2529L is a 2.4GHz, Silicon Germanium power amplifier designed for use in the 2.4GHz ISM band for wireless LAN and cordless telephone applications. For wireless LAN applications, the device meets the system requirements of IEEE802.11g and delivers approximately +.

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www.DataSheet4U.com SE2529L RangeCharger™ 2.4GHz Power Amplifier Applications ƒ ƒ ƒ ƒ DSSS 2.4GHz WLAN (IEEE 802.11b) OFDM 2.4GHz WLAN (IEEE 802.11g) Access Points, PCMCIA, PC cards 2.4GHz cordless telephones Product Description The SE2529L is a 2.4GHz, Silicon Germanium power amplifier designed for use in the 2.4GHz ISM band for wireless LAN and cordless telephone applications. For wireless LAN applications, the device meets the system requirements of IEEE802.11g and delivers approximately +19dBm, at an EVM of 2.5%, while achieving an adjacent channel power of better than – 26dBc @ 11MHz offset. The SE2529L meets this performance and output power while adhering to the FCC 15.209 restricted band requirements. For IEEE802.11b, the SE2529L delivers approximately +23dBm @ ACPR = -32dBc. The SE2529L typically achieves harmonic performance of -65dBc with the recommended discrete integrated output match and low pass filter, thus not requiring an expensive and larger band pass filter. Features ƒ Delivers industry leading output power: +19dBm, 802.11g, 54 Mbps, EVM = 2.5% +23dBm, 802.11b, ACPR < -32dBc +25dBm CW P1dB at 3.3V Superior harmonic performance, No band pass filter required allowing for a lower BOM 31dB Gain Exceptional temperature stability Small plastic package, 12 pin QFN ƒ ƒ ƒ ƒ Ordering Information Type SE2529L SE2529L-R SE2529L-EK1 Package 12 - 4x4mm QFN 12 - 4x4mm QFN Remark Samples Tape and Reel Evaluation Kit Functional Block Diagram V0 Vb 1 Vb 2 Vb 3 Current Mirror Current Mirror Current Mirror IN Stage 1 I/S Match Stage 2 I/S Match Stage 3 OUT/VCC3 VCC1 V CC2 Figure 1: SE2529L Functional Block Diagram 63-DST-01 ƒ Rev 2.0 ƒ Nov 9/03 1 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Pin Out Diagram SE2529L Top View GND VCC1 VCC2 SE2529L Bottom View GND 12 1 2 Die Pad VCC2 10 9 8 7 GND OUT/VCC3 GND GND OUT/VCC3 GND 9 8 7 6 12 11 10 GND IN Vb1 1 2 3 4 5 6 11 VCC1 GND IN Vb1 3 5 Vb2 Vb2 Vb3 VCC0 Vb3 Figure 2: SE2529L Pin-Out Diagram Pin Out Description Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Die Pad Name GND IN Vb1 VCC0 Vb2 Vb3 GND OUT/ VCC3 GND VCC2 VCC1 GND GND 1 1 1 Note Ground Power amplifier RF input Stage 1 bias Bias supply voltage Stage 2 bias Stage 3 bias Ground PA output and Stage 3 collector supply voltage; external output matching network with DC feed required. Ground Stage 2 collector supply Stage 1 collector supply Ground Exposed die pad; electrical and thermal ground Description Notes: (1) Pin for injecting bias current – refer to SiGe Semiconductor’s applications support for optimum values for particular applications. 63-DST-01 ƒ Rev 2.0 ƒ Nov 9/03 VCC0 4 2 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Equivalent Circuit Diagram V CC1 V CC2 OUT/V CC3 IN VCC 0 bias Die Pad / Gnd Vb 1 Vb 2 Vb 3 Figure 3: SE2529L Equivalent Circuit Diagram Evaluation Board Equivalent Circuit Diagram IN I /P Match SE2529L O /P Match OUT/VCC3 Vb b VCC Figure 4: SE2529L Evaluation Board Block Diagram 63-DST-01 ƒ Rev 2.0 ƒ Nov 9/03 3 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Absolute Maximum Ratings These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. Symbol VCC Vbb IN TA TSTG Tj Definition Supply Voltage on VCC0, VCC1, VCC2 and OUT/VCC3 Bias Voltage (Vb1, Vb2, Vb3) RF Input Power Operating Temperature Range Storage Temperature Range Maximum Junction Temperature -40 -40 Min. -0.3 -0.3 Max. +3.6 +3.6 +8 +85 +150 +150 Unit V V dBm °C °C °C Recommended Operating Conditions Symbol VCC TA Parameter Supply Voltage (VCC0, VCC1, VCC2, OUT/VCC3) Ambient Temperature Min. 3.0 -40 Max. 3.6 85 Unit V °C DC Electrical Characteristics 802.11g DC Electrical Characteristics Conditions: VCC = 3.3V, Vbb = 2.9V TA = 25°C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation board, unless otherwise noted. “802.11g” mode, circuit tuning/biasing optimized for “g” full rate signal. Symbol ICC ∆IccTEMP Parameter Supply Current (POUT = 19 dBm, 54 Mbps OFDM signal, 64QAM) Supply Current variation over temperature from TA = 25°C (-40°C < TA < +85°C) Note 1 1 Min. 175 Typ. 200 ±10 Max. 225 Unit mA % Notes: (1) ICC refers to the total current into VCC0, VCC1, VCC2 and OUT/Vcc3 802.11b DC Electrical Characteristics Conditions: VCC = 3.3V, Vbb = 2.9V, TA = 25°C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation board, unless otherwise noted. “802.11b” mode, circuit tuning/biasing optimized for “g” full rate signal. Symbol ICC ∆IccTEMP Parameter Supply Current (POUT = 23dBm, 11Mbps CCK signal) Supply Current variation over temperature from TA = 25°C (-40°C < TA < +85°C) Note 1 1 Min. 240 Typ. 280 ±10 Max. 305 Unit mA % Notes: (1) ICC refers to the tota.


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