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RB085T-90
Diodes
Schottky barrier diode
RB085T-90
zApplications Switching power supply zExternal d...
www.DataSheet4U.com
RB085T-90
Diodes
Schottky barrier diode
RB085T-90
zApplications Switching power supply zExternal dimensions (Unit : mm)
4.5±0.3 0.1
zStructure
8.0±0.2 12.0±0.2
zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
1.2
10.0±0.3 0.1
2.8±0.2 0.1
15.0±0.4 0.2 13.5MIN
①
zConstruction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
5.0±0.2
0.7±0.1 0.05
8.0
2.6±0.5
ROHM : TO220FN ① Manufacture Date
zAbsolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature (*1)Tc=100℃max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 10 100 150 -40 to +150 Unit V V A A ℃ ℃
zElectrical characteristic (Ta=25°C)
Parameter Forward characteristics Reverse characteristics Thermal impedance Symbol VF IR θjc Min. Typ. Max. 0.83 150 2.5 Unit V µA ℃/W Conditions IF=5A VR=90V junction to case
Rev.B
1/3
RB085T-90
Diodes
zElectrical characteristic curves
10 Ta=150℃ 1 Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=-25℃
REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A)
100000 10000 1000 100
Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 f=1MHz
100
10 1 0.1 0.01 Ta=-25℃
10
0.01
0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 0 10 20 REVERSE VOLTAGE...