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RB085B-30
Diodes
Schottky barrier diode
RB085B-30
zApplications General rectification zExternal di...
www.DataSheet4U.com
RB085B-30
Diodes
Schottky barrier diode
RB085B-30
zApplications General rectification zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
6.0
5.5±0.3 0.1
9.5±0.6
zFeatures 1) Power mold type. (CPD) 2) Low VF 3) High reliability
6.5±0.2 5.1±0.2 0.1 C0.5 1.5±0.3
2.3±0.2 0.1 0.5±0.1
①
1.5
CPD
2.3 2.3
zConstruction Silicon epitaxial planar
0.75 0.9 (1) (2) (3) 0.65±0.1
2.5
zStructure
0.5±0.1 1.0±0.2
2.3±0.2 2.3±0.2
ROHM : CPD JEITA : SC-63 ① Manufacture Date
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 8.0±0.1 φ1.55±0.1 0 2.5±0.1 0.4±0.1
7.5±0.05
10.1±0.1
6.8±0.1
8.0±0.1
φ3.0±0.1
0~0.5
13.5±0.2
10.1±0.1 2.7±0.2
TL
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 35 30 10 35 150 -40 to +150
Unit V V A A ℃ ℃
(*1)Rating of per diode : Io/2
zElectrical characteristic (Ta=25°C) Parameter Symbol
Forward voltage Reverse current Thermal impedance
VF IR θjc
Min. -
Typ. -
Max. 0.48 300 6.0
Unit V µA ℃/W
Conditions IF=4.0A VR=30V junction to case
Rev.B
16.0±0.2
3.0 2.0
1.6
1.6
6.0
1/3
RB085B-30
Diodes
zElectrical characteristic curves
10 Ta=150℃
REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A)
1000000 100000 Ta=25℃ Ta=-25℃ 10000 1000 100 10 1 0.1
Ta=150℃
Ta=125℃
10000
:f=1MHz
f=1MHz
T...