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NESG2101M16

Part Number	NESG2101M16
Manufacturer	CEL
Description	NPN SiGe HIGH FREQUENCY TRANSISTOR
Published	Jul 31, 2007
Detailed Description	com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BR...
Datasheet	NESG2101M16 PDF File

Overview

com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.
9 dB at 2 GHz NF = 0.
6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 • • DESCRIPTION NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P...

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