NESG2031M05

www.DataSheet4U.com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M05 DESCRIPTION NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: 1. MSG = S21 S12 2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2 NESG2031M05 M05 UNITS dB dB dB dB dB dB dBm dBm GHz pF nA nA 130 190 20 15.0 19.0 16.0 MIN TYP 1.3 10.0 0.8 17.0 21.5 18.0 13 23 25 0.15 0.25 100 100 260 1.1 MAX PARAMETERS AND CONDITIONS Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS ...