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NESG2021M05

Part Number	NESG2021M05
Manufacturer	CEL
Description	NPN SiGe HIGH FREQUENCY TRANSISTOR
Published	Jul 31, 2007
Detailed Description	www.DataSheet4U.com DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAG...
Datasheet	NESG2021M05 PDF File

Overview

www.
DataSheet4U.
com DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.
9 dB at 2 GHz NF = 1.
3 dB at 5.
2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.
5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.
59 mm Flat lead style for better RF performance Pb Free M05 • • • DESCRIPTION NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators.
NECʼs low proﬁle, ﬂat lead style M05 Package provides hig...

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