MBM29PL65LM

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M (4M × 16) BIT MirrorFlashTM MBM29PL65LM-90/10 s DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase. Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed standby mode operation. MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type is 48-pin TSOP . Embedded Program AlgorithmTM, when executed with erase or program command sequences, automatically times the program pulse widths and verifies proper cell margin. MBM29PL65LM, because of its capability in electrical data erase and program through write command, enables to rewrite data within the internal system. It is a truly dependable device for vast application possibilities. s PRODUCT LINE UP Part No. VCC VCCQ Max Address Access Time Max CE Access Time Max Page Read Access Time MBM29PL65LM-90 3.0 V to 3.6 V VCC 90 ns 90 ns 25 ns MBM29PL65LM-10 3.0 V to 3.6 V VCC 100 ns 100 ns 30 ns s PACKAGE 48-pin plastic TSOP (1) Marking Side (FPT-48P-M19) Notes: Programming in byte mode ( × 8) is prohibited. Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same address. MBM29PL65LM-90/10 s FEATURES MirrorFlash MemoryTM*1 ...