MBM29BS12DH15

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20910-2E BURST MODE FLASH MEMORY CMOS 128M (8M × 16) BIT MBM29BS/FS12DH 15 s DESCRIPTION The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Handshaking On/Off Max Latency (even address in case of Handshaking) Time (ns) Synchronous/Burst Max Burst Access Time (ns) Max OE Access Time (ns) Max Address Access Time (ns) Asynchronous Max CE Access Time (ns) Max OE Access Time (ns) MBM29BS12DH Non-Handshaking 71 11 11 50 50 11 MBM29FS12DH Handshaking 56 11 11 50 50 11 s PACKAGE 80-ball plastic FBGA (BGA-80P-M04) MBM29BS/FS12DH15 (Continued) The device provides truly high performance non-volatile memory solution. The device offers fast burst access frequency of 66 MHz with initial access times of 56 ns at Handshaking mode, allowing operation of high-speed microprocessors without wait states. To eliminate bus connection the device has separate chip enable (CE), write enable (WE), address valid (AVD) and output enable (OE) controls. For burst operations, the device additionally requires Ready (RDY) at Handshaking mode, and Clock (C...