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an AMP company
RF MOSFET Power 100 - 500 MHz
Features
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-www.DataSheet4U.com 3== -0-z =z
--
32 -z= .-me--= =
*
an AMP company
RF MOSFET Power 100 - 500 MHz
Features
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Transistor,
4OW, 28V
UF2840G
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances
Mode Device Operation Devices
for Broadband
High Saturated Output Power Lower Noise Figure Than Competitive
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source Gate-Source Voltage Voltage
Symbol
V OS V GS ‘OS P, 1 T, (
Rating
65 20 4’ 116 200 -55 to +150 1.52 I
Units
V V A w “C “C “C/w
1 F I 6.22 I 6.48 1 a245 I .2X5 I
Drain-Source&rent Power Dissipation 1 JunctionTemperature
I
Storage Temperature
Thermal Resistance
TST0
8JC
1
K
I
l.18 I 203
I
.070 I
x180 I
Electrical Characteristics
at 25°C
* Per Side Specificatms Subject to Change Without Notice.
M/A-COM,
Inc.
RF MOSFET Power
Transistor,
4OW, 28V
U F2840G
v2.00
Typical Broadband Performance
Curves
GAIN vs FREQUENCY
V,,=28 V I,,=500 mA P,,,=40 W
EFFICIENCY
V,,=28
vs FREQUENCY
mA P,,,~40 W
V I,,=500
25
" 3 6 . $ 0 ii ::
65
.
60
55
-
100
200
300
400
500
100
200
300
400
500
FREQUENCY
(MHz)
FREQUENCY
(%)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=500 mA
0.25
0.5
1
2
2.5
POWER INPUT (W)
Specifications Subject to Change Without Notice.
M/A-COM,
Inc.
RF MOSFET Power
Transistor,
4OW, 28V
U F2840G
v2.00
Typical Device Impedance
Frequency (MHz)
100
Z,, (OHMS)
6.0 - j 20.0 3.5 -j 11.5 2.5 - j 5.5 1 ( 3.0 + j 0.0 4.0 + j 3.0 V, I,,=500 mA, P,,,=40.0 Wat...