R1LV0416C-I

www.DataSheet4U.com R1LV0416C-I Series Wide Temperature Range Version 4M SRAM (256-kword × 16-bit) REJ03C0105-0200Z Rev. 2.00 May.26.2004 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II. Features Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V Fast access time: 55/70 ns (max) Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three state output Battery backup operation.  2 chip selection for battery backup Temperature range: −40 to +85°C Rev.2.00, May.26.2004, page 1 of 16 R1LV0416C-I Series Ordering Information Type No. R1LV0416CSB-5SI R1LV0416CSB-7LI Access time 55 ns 70 ns Package 400-mil 44-pin plastic TSOP II (44P3W-H) Rev.2.00, May.26.2004, page 2 of 16 R1LV0416C-I Series Pin Arrangement 44-pin TSOP A4 A3 A2 A1 A0 CS1# I/O0 I/O1 I/O2 I/O3 V CC V SS I/O4 I/O5 I/O6 I/O7 WE# A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38...