DatasheetsPDF.com

NE856M02 Dataheets PDF



Part Number NE856M02
Manufacturers CEL
Logo CEL
Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Datasheet NE856M02 DatasheetNE856M02 Datasheet (PDF)

www.DataSheet4U.com NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 1.5±0.1 NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring.

  NE856M02   NE856M02


NE851M33 NE856M02 PH1516-60


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)