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DATA SHEET
NEC's NPN SILICON TRANSISTOR NE851M33
FEATURES
• • • LOW PHASE DISTORTION, LOW VOLTAGE...
www.DataSheet4U.com
DATA SHEET
NEC's
NPN SILICON
TRANSISTOR NE851M33
FEATURES
LOW PHASE DISTORTION, LOW VOLTAGE OPERATION IDEAL FOR OSC APPLICATIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER NE851M33-A NE851M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM 8 mm wide embossed taping Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot
Note
RATINGS 9.0 5.5 1.5 100 130 150 −65 to +150
UNIT V V V mA mW °C °C
Tj Tstg
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NE851M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure Reverse Transfer Capacitance fT fT |S21e|2 |S21e| NF Cre Note 2
2
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO IEBO hFE Note 1
VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 1 V, IC = 5 ...