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NE851M03 Dataheets PDF



Part Number NE851M03
Manufacturers CEL
Logo CEL
Description NPN SILICON TRANSISTOR
Datasheet NE851M03 DatasheetNE851M03 Datasheet (PDF)

www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M03 FEATURES • NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS LOW 1/f NOISE LOW PUSHING FACTOR 1.4 ±0.1 0.45 (0.9) OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 • • • 80 0.45 1 +0.1 0.2 -0 3 0.3 +0.1 -0 DESCRIPTION NEC's NE851M03 transistor is designed for oscillator applications up to 3 GH.

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www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M03 FEATURES • NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS LOW 1/f NOISE LOW PUSHING FACTOR 1.4 ±0.1 0.45 (0.9) OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 • • • 80 0.45 1 +0.1 0.2 -0 3 0.3 +0.1 -0 DESCRIPTION NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's low profile/flat lead style "M03" package is ideal for today's portable wireless applications. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT fT |S21E|2 |S21E|2 NF CRE ICBO IEBO hFE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 1 V, IC = 5 mA 2 NE851M03 2SC5800 M03 UNITS GHz GHz dB dB dB pF nA nA MIN 3.0 5.0 3.0 4.5 – – – – 100 TYP 4.5 6.5 4.0 5.5 1.9 0.6 – – 120 MAX – – – 2.5 0.8 600 600 145 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 3. Collector to base capacitance when the emitter is grounded California Eastern Laboratories NE851M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9.0 5.5 1.5 100 200 150 -65 to +150 ORDERING INFORMATION PART NUMBER QUANTITY NE851M03-T1-A 3 k pcs./reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance, Cre (pF) 300 REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.0 f = 1 MHz Total Power Dissipation, Ptot (mW) 250 Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm(t) ) 0.8 200 0.6 150 100 0.4 50 0.2 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 Ambient Temperature, TA (°C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 VCE = 1 V 400 µ A 360 µ A 320 µ A Collector Current, IC (mA) Collector Current, IC (mA) 80 50 40 30 280 µ A 60 240 µ A 200 µ A 40 20 160 µ A 120 µ A 20 10 80 µ A 0 IB = 40 µA 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 6 7 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) NE851M03 TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 10 VCE = 1 V f = 2 GHz 8 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 2 V f = 2 GHz 8 Gain Bandwidth Product, fT (GHz) 6 Gain Bandwidth Product, fT (GHz) 10 100 6 4 4 2 2 0 1 0 Collector Current, IC (mA) 1 10 100 Collector Current, IC (mA) INSERTION POWER GAIN vs. FREQUENCY 35 INSERTION POWER GAIN vs. FREQUENCY 35 Insertion Power Gain, |S21e|2 (dB) 30 25 20 15 10 5 0 0.1 Insertion Power Gain, |S21e|2 (dB) VCE = 1 V IC = 5 mA 30 25 20 15 10 5 0 0.1 VCE = 2 V IC = 5 mA Frequency, f (GHz) 1 10 Frequency, f (GHz) 1 10 INSERTION POWER GAIN vs. FREQUENCY 35 INSERTION POWER GAIN vs. FREQUENCY 35 Insertion Power Gain, |S21e|2 (dB) 30 25 20 15 10 5 0 0.1 Insertion Power Gain, |S21e|2 (dB) VCE = 1 V IC = 15 mA 30 25 20 15 10 5 0 0.1 VCE = 2 V IC = 15 mA Frequency, f (GHz) 1 10 Frequency, f (GHz) 1 10 NE851M03 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 20 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) MSG 15 MAG MSG 15 MAG 10 |S21e| 2 10 |S21e| 2 5 VCE = 1 V f = 1 GHz 5 VCE = 2 V f = 1 GHz 0 1 10 100 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT 15 INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT 15 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) VCE = 1 V f = 2 GHz MAG VCE = 2 V f .


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