NE688M13

www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 FEATURES NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 +0.1 0.5 –0.05 +0.1 0.15 –0.05 1 0.35 0.3 2 XX 1 +0.1 1.0 –0.05 3 0.7 0.35 2 +0.1 0.15 –0.05 0.2 3 +0.1 0.2 –0.05 0.1 0.1 0.2 DESCRIPTION The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. 0.5±0.05 +0.1 0.125 –0.05 Bottom View PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz Forward Current ...