NE688

www.DataSheet4U.com SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES LOW PHASE NOISE DISTORTION LOW NOISE: 1.5 dB at 2.0 GHz LOW VOLTAGE OPERATION LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES ALSO AVAILABLE IN CHIP FORM 18 (SOT 343 STYLE) NE688 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) rs e b m : u E n ot T t n O r . e a N r n p a g E S si ng heet A i e E d w w PL llo as r e t o o n f a f d r e T h CHARACTERISTICS his ded fo office ELECTRICAL t fro m mmen sales l o rec se cal a Ple ils: a det 8818 N E 6 8 8 39 NE6 8839R NE6 NEC's NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688's low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount package styles, and in chip form. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68818 2SC5194 18 NE68819 2SC5195 19 NE68830 2SC5193 30 NE68833 2SC5191 33 fT fT NFMIN NFMIN |S21E|2 |S21E|2 hFE ICBO IEBO CRE4 PT RTH(J-A) Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz Minimu...