(MASW-00x100-119x) Broadband Monolithic Silicon PIN Diode Switches
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Broadband Monolithic Silicon PIN Diode Switches
Rev 2.0
Features
• Broad Bandwidth Specified from 5...
Description
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Broadband Monolithic Silicon PIN Diode Switches
Rev 2.0
Features
Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt Rugged, Fully Monolithic, Glass Encapsulated Construction Up to +33dBm C.W. Power Handling @ + 25°C
MASW-001100-1190 MASW-002100-1191 MASW-003100-1192
MASW-001100-1190
Description
The MASW-001100, MASW-002100 and MASW-003100 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive Ag epoxy.
MASW-002100-1191
MASW-003100-1192
Absolute...
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