MAPRST2729-170M

www.DataSheet4U.com MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 FEATURES OUTLINE DRAWING Designed for ATC Radar Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature VCES VEBO IC PD TSTG TJ 65 3.0 27 TBD -65 to +200 200 Units V V A W °C °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Power Output Power Gain Collector Efficiency Input Return Loss Load Mismatch Stability Load Mismatch Tolerance BVCES ICES RTH Pout GP 65 170 8.5 40 10 - Max 15 .25 (TBD) 1.5:1 2:1 Units V mA °C/W Wpk dB % dB IC=50mA VCE=36V Test Conditions VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz ηC RL VSWR-S ...