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MAPLST2122-030CF

Part Number	MAPLST2122-030CF
Manufacturer	Tyco Electronics
Description	RF Power Field Effect Transistor
Published	Jul 26, 2007
Detailed Description	com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 4/6/2005 Preliminary MAPLST212...
Datasheet	MAPLST2122-030CF PDF File

Overview

com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 4/6/2005 Preliminary MAPLST2122-030CF Features Designed for W-CDMA base station applications in the 2.
1 to 2.
2 GHz Frequency Band.
Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
Q Q Q Package Style 30W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR @ 4.
096MHz) Q Output Power: 4.
5W (typ.
) Q Gain: 12dB (typ.
) Q Efficiency: 16% (typ.
) 10:1 VSWR Ruggedness (CW @ 30W, 28V, 2110MHz) Q MAPLST2122-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperatur...

Similar Datasheet

MAPLST2122-030CF RF Power Field Effect Transistor - Tyco Electronics

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