MAPLST1820-060CF

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V 5/24/04 Preliminary MAPLST1820-060CF Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Output Power: 30W Power Gain: 13dB (typ.) Efficiency: 35% (typ.) Package Style P-238 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1800 — 2000 MHz, 60W, 26V MAPLST1819-060CF 5/24/04 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 26 Vdc, Id = 60 mA) Gate Quiescent Voltage (VDS = 26 Vdc, Id = 500 mA) Drain-Source On-Voltage (VGS = 10 Vdc, Id = 1 A) Forward Transconductance (VGS = 10 Vdc, Id = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacit...