High Linearity InGaP HBT Amplifier
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AH115
The Communications Edge TM Product Information
½ Watt, High Linearity InGaP HBT Amplifier
...
Description
www.DataSheet4U.com
AH115
The Communications Edge TM Product Information
½ Watt, High Linearity InGaP HBT Amplifier
Product Features
x 1800 – 2300 MHz x +28.5 dBm P1dB x +44 dBm Output IP3 x 14 dB Gain @ 1960 MHz x +5V Single Positive Supply x MTTF > 100 Years x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.
Product Description
The AH115 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrow-band tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1-dB power. All devices are 100% RF and DC tested. The AH115 is available in leadfree/green/RoHS-compliant SOIC-8 package. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH115 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations.
Functional Diagram
1 8 7 6 5 2 3 4
Applications
x Final stage amplifiers for Repeaters x Mobile Infrastructure
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc AC...
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