MADS-002545-1307M

www.DataSheet4U.com SURMOUNTTM Medium Barrier Silicon Schottky Diodes: Cross-Over Quad Series Ultra-small 600x600um Surface-Mount Chip Features Ultra Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits , No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) Lower Susceptibility to ESD Damage MADS-002545-1307M V1 Topview A B Description and Applications The MADS-002545-1307M Series SurMount™ Medium Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. T...