DatasheetsPDF.com

IL207AT Dataheets PDF



Part Number IL207AT
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description (IL205AT - IL208AT) Optocoupler Phototransistor Output
Datasheet IL207AT DatasheetIL207AT Datasheet (PDF)

www.DataSheet4U.com IL205AT/ 206AT/ 207AT/ 208AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package Features • High BVCEO, 70 V • Isolation Test Voltage, 3000 VRMS • Industry Standard SOIC-8A Surface e3 Mountable Package • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 K 2 NC 3 NC 4 8 7 6 5 NC B C E i179002 Agency Approvals • UL1577, .

  IL207AT   IL207AT


Document
www.DataSheet4U.com IL205AT/ 206AT/ 207AT/ 208AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package Features • High BVCEO, 70 V • Isolation Test Voltage, 3000 VRMS • Industry Standard SOIC-8A Surface e3 Mountable Package • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 K 2 NC 3 NC 4 8 7 6 5 NC B C E i179002 Agency Approvals • UL1577, File No. E52744 System Code Y • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard 30 V. Description The IL205AT/ IL206AT/ IL207AT/ IL208AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. This family comes in a standard SOIC-8A small outline package for surface mounting which makes them ideally suited for high density application with limited space. In addition to eliminating through-hole requirements, this package conforms to standards for surface mounted devices. Order Information Part IL205AT IL206AT IL207AT IL208AT Available on Tape and Reel only. For additional information on the available options refer to Option Information. Remarks CTR 40 - 80 %, SOIC-8 CTR 63 - 125 %, SOIC-8 CTR 100 - 200 %, SOIC-8 CTR 160 - 320 %, SOIC-8 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25 °C Test condition Symbol VR IF Pdiss Value 6.0 60 90 1.2 Unit V mA mW mW/°C Document Number 83614 Rev. 1.6, 18-Apr-05 www.vishay.com 1 IL205AT/ 206AT/ 207AT/ 208AT Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage ICMAX DC ICMAX Power dissipation Derate linearly from 25 °C t < 1.0 ms Test condition Symbol BVCEO BVECO BVCBO ICMAX DC ICMAX Pdiss Value 70 7.0 70 50 100 150 2.0 Unit V V V mA mA mW mW/°C Coupler Parameter Total package dissipation (LED + detector) Derate linearly from 25 °C Operating temperature Storage temperature Soldering time at 260 °C Tamb Tstg Test condition Symbol Ptot Value 240 3.3 - 55 to + 100 - 55 to + 150 10 Unit mW mW/°C °C °C s Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 6.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.3 0.1 13 Max 1.5 100 Unit V µA pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter leakage current Test condition IC = 100 µA IE = 100 µA VCE = 10 V Symbol BVCEO BVECO ICEO Min 70 7.0 10 5.0 50 Typ. Max Unit V V nA Coupler Parameter Saturation voltage, collectoremitter Isolation test voltage Equivalent DC, isolation voltage Capacitance (input-output) Resistance, input to output CIO RIO Test condition IC = 2.0 mA, IF = 10 mA Symbol VCEsat VISO 3000 3535 0.5 100 Min Typ. Max 0.4 Unit V VRMS VDC pF Ω www.vishay.com 2 Document Number 83614 Rev. 1.6, 18-Apr-05 IL205AT/ 206AT/ 207AT/ 208AT Vishay Semiconductors Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 10 mA, VCE = 5.0 V Part IL205AT IL206AT IL207AT IL208AT IF = 1.0 mA, VCE = 5.0 V IL205AT IL206AT IL207AT IL208AT Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 100 13 22 34 56 25 40 60 95 Typ. Max 80 125 200 320 Unit % % % % % % % % Switching Characteristics Parameter Switching time Test condition IC = 2 mA, RL = 100 Ω, VCC = 10 V Symbol ton, toff Min Typ. 3.0 Max Unit µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.4 1.3 VF - Forward Voltage - V ICE - Collector-emitter Current - mA 150 1.2 1.1 1.0 0.9 0.8 0.7 .1 TA= –55°C VCE = 10 V 100 TA= 25°C TA = 85°C VCE = 0.4 V 50 1 10 100 i205at_03 0 .1 i205at_01 IF - Forward Current - mA 1 10 IF - LED Current - mA 100 Figure 1. Forward Voltage vs. Forward Current Figure 3. Collector-Emitter Current vs.LED Current 1.5 NCTRCE - Normalized - CTRCE Nor.


IL206AT IL207AT IL208AT


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)