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HAT3021R

Renesas Technology
Part Number HAT3021R
Manufacturer Renesas Technology
Description Silicon N/P Channel Power MOSFET
Published Jul 24, 2007
Detailed Description HAT3010R Silicon N / P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.5 V...
Datasheet PDF File HAT3021R PDF File

HAT3021R
HAT3021R

Overview
HAT3010R Silicon N / P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.
5 V gate drive • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 87 65 1234 2 4 G G S1 Nch 56 DD S3 Pch REJ03G1199-1000 (Previous: ADE-208-1402H) Rev.
10.
00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.
10.
00 Sep 07, 2005 page 1 of 9 HAT3010R Absolute Maximum Ratings Item Symbol Value Nch Pch Drain to source voltage Gate to source voltage VDSS VGSS 60 –60 ±20 ±20 Drain current Drain peak current ID 6 ID (pulse) Note 1 48 –5 –40 Body-drain diode reverse drain current Channel dissipat...


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