SPD 28N03
SIPMOS® Power Transistor
Features • N channel
•
Product Summary Drain source voltage Drain-Source on-state r...
SPD 28N03
SIPMOS® Power
Transistor
Features N channel
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 28
V A
Enhancement mode
RDS(on) 0.023 Ω
Avalanche rated dv/dt rated 175˚C operating temperature
Type SPD28N03 SPU28N03
Package P-TO252
Ordering Code Q67040-S4138
Packaging Tape and Reel
Pin 1 G
Pin 2 Pin 3 D S
P-TO251-3-1 Q67040-S4140-A2 Tube
www.DataSheet4U.com
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 28 28 112 145 7.5 6 kV/µs mJ Unit A
ID
TC = 25 ˚C, 1) TC = 100 ˚C
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 ˚C
Avalanche energy, single pulse
ID = 28 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS = 28 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C
Gate source voltage Power dissipation
VGS Ptot T j , Tstg
±20 75 -55... +175 55/175/56
V W ˚C
TC = 25 ˚C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
06.99
SPD 28N03
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 2 100 75 50 K/W Unit
RthJC RthJA RthJA
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Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min...