MAPPST2933-190M

Preliminary Datasheet DS042806 MAPPST2933-190M RADAR PULSED POWER PALLET 190 Watts, 2.9 – 3.3 GHz 200μs Pulse, 10% Duty FEATURES Input and output matched to 50Ω RC bias circuit included Dual NPN silicon class C power transistors on in BeO hermetic packages Soft substrate εr = 10.5 Nickel plated copper flange Preliminary Outline Drawing ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Junction Temparature www.DataSheet4U.com Symbol VCES VEBO Tj θJC TC TSTG Rating 65 3.0 200 TBD -10 to +100 -20 to +125 Units V V °C °C/W °C °C Thermal Resistance Operating Flange Temp. Storage Temp. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Input Power Power Gain Collector Efficiency Input Return Loss Pulse Amplitude Droop 2 Harmonic Spurious Level Insertion Phase Deviation Tolerance & Stability Stability at Overdrive Gain Flatness over Frequency nd Symbol Pin Gp η C RL Droop 2fc Spurious Δϕ VSWR-T OD-STAB GF Test Conditions Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3.3 GHz Pin = (Pin @ Pout = 190Wpk) + 1dB [Note 1] Vcc = 36V, Pout = 190Wpk, F = 2.9, 3.1, 3....