MA4AGFCP910

AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz Features MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitride Passivation Polyimide Scratch Protection Description M/A-COM's MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics. www.DataSheet4U.com They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. Package Outline Electrical Specifications at TA = 25 °C Parameters and Test Conditions Symbol Units 1 MHz & DC Specifications Min Total Capacitance at –5 V RF Resistance at +10 mA Forward Voltage at +10 mA Reverse Breakdown Voltage at 10 uA3 Minority Carrier Lifetime Ct Rs Vf Vb pF Ω Volts Volts nS 50 1.33 75 4.0 1.4 Typ. 0.018 Max 0.021 10 GHz Reference 1,2 Data Min Typ. 0.018 5.2 Max. .021 6.0 τL Notes: 1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz. 2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss i...