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CDBUR42

Comchip Technology

(CDBUR42 / CDBUR43) SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR42/43 (RoHs Device) Io = 200 mA V R = 30 Volts Features Low forwa...


Comchip Technology

CDBUR42

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR42/43 (RoHs Device) Io = 200 mA V R = 30 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. 0.018(0.45) Typ. 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) www.DataSheet4U.com Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Thermal resistance junction to ambient air Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO I FRM 30 30 21 200 0.5 4 150 667 -55 +125 +125 V V V mA A A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD R JA C/W O T STG Tj O C C O Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Forward voltage CDBUR42/43 CDBUR42 CDBUR42 CDBUR43 CDBUR43 I F = 200mA I F = 10mA I F = 50mA I F = 2mA I F = 15mA V R = 25V f = 1 MHz, and 1 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 ohm Conditions Symbol Min Typ Max Unit V...




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