SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBUR0245 (RoHs Device)
Io = 200 mA V R = 45 Volts Features
Designed f...
SMD
Schottky Barrier Diode
SMD Diodes Specialist
CDBUR0245 (RoHs Device)
Io = 200 mA V R = 45 Volts Features
Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current( I R =0.1uA typ. @V R =10V). Majority carrier conduction.
0.039(1.00) 0.031(0.80)
0603(1608)
0.071(1.80) 0.063(1.60)
Mechanical data
Case: 0603(1608) standard package, molded plastic.
0.018(0.45) Typ. 0.033(0.85) 0.027(0.70)
Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
www.DataSheet4U.com
0.028(0.70) Typ.
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
V RRM VR IO 50 45 200 V V mA
8.3ms single half sine-wave superimposed on rate load(JEDEC method)
I FSM PD T STG Tj -40 -40
2000 150 +125 +125
mA mW
O
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current Capacitance between terminals V R = 10 V
Conditions
I F = 200 mA DC
Symbol Min Typ Max Unit
VF IR CT 9 0.55 1 V uA
PF
f = 1 MH Z , and 10VDC reverse voltage
REV:A
QW-A1072
Page 1
SMD
Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBUR0245)
Fig. 1 - Forward characte...
