SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBUR0140R(RoHs Device)
Io = 100 mA V R = 40 Volts Features
Low revers...
SMD
Schottky Barrier Diode
SMD Diodes Specialist
CDBUR0140R(RoHs Device)
Io = 100 mA V R = 40 Volts Features
Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
0.039(1.00) 0.031(0.80)
0603(1608)
0.071(1.80) 0.063(1.60)
Mechanical data
0.033(0.85)
Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.).
www.DataSheet4U.com
0.028(0.70) Typ.
0.027(0.70)
0.018(0.45) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Repetitive Peak reverse voltage Reverse voltage Average forward rectified current Forward current,surge peak Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
V RRM VR IO 45 40 100 1 -40 +125 +125 V V mA A
O
8.3 ms single half sine-wave superimposed on rate load (JEDEC method)
I FSM T STG Tj
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current Capacitance between terminals I F = 10mA V R = 10V
Conditions
Symbol Min Typ Max Unit
VF IR CT 6 0.45 1 V uA pF
f = 1 MHz, and 10 VDC reverse voltage
REV:A
QW-A1060
Page 1
SMD
Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBUR0140R)
Fig. 1 - Forward characteristics
1000 1m 100u
Fig. 2 - Reverse characteristics
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