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CDBUR0140L

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0140L (RoHs Device) Io = 100 mA V R = 40 Volts Features Low forwa...


Comchip Technology

CDBUR0140L

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0140L (RoHs Device) Io = 100 mA V R = 40 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data 0.033(0.85) Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). www.DataSheet4U.com 0.028(0.70) Typ. 0.027(0.70) 0.018(0.45) Typ. Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive Peak reverse voltage Reverse voltage Average forward rectified current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 45 40 100 1 -40 +125 +125 V V mA A O 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) I FSM T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals I F = 100mA I F = 10mA V R = 10V Conditions Symbol Min Typ Max Unit VF IR CT 6 0.55 0.34 30 V uA pF f = 1 MHz, and 10 VDC reverse voltage REV:A QW-A1058 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR0140L) Fig. 1 - Forward characteristics 1000 10m 1m Fig. 2 - Revers...




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