MSG36E41

Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier ■ Features Compatible between high breakdown voltage and high cut-off frequency Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02 MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Tr2 www.DataSheet4U.com Display at No.1 lead VCBO VCEO VEBO IC VCBO VCEO VEBO IC PT Tj Tstg 9 6 1 100 9 6 1 30 125 125 −55 to +125 V V V mA V V V 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2) 0.37+0.03 -0.02 4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Marking Symbol: 6D Internal Connection 6 Tr1 5 4 Tr2 mA mW °C °C Overall Total power dissipation * Junction temperature Storage temperature 1 2 3 Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm. ■ Electrical Characteristics Ta = 25°C ± 3°C Tr1 Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current tra...