512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510432M
Preliminary CMOS SDRAM
512Mbit SDRAM
32M x 4bit x 4 Banks Synchronous DRAM LVTTL
www.DataSheet4U.com
Revi...
Description
K4S510432M
Preliminary CMOS SDRAM
512Mbit SDRAM
32M x 4bit x 4 Banks Synchronous DRAM LVTTL
www.DataSheet4U.com
Revision 0.2 Dec. 2001
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.2 Dec. 2001
K4S510432M
Revision History
Revision 0.0 (Mar. 2001) Revision 0.1 (Aug. 2001)
Defined target DC characteristics.
Preliminary CMOS SDRAM
Revision 0.2 (Dec. 2001)
Changed "Target" to "Preliminary". Redefined DC characteristics.
Rev. 0.2 Dec. 2001
K4S510432M
32M x 4Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (8K cycle) Part No. K4S510432M-TC/TL75 K4S510432M-TC/TL1H K4S510432M-TC/TL1L
Preliminary CMOS SDRAM
GENERAL DESCRIPTION
The K4S510432M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies all...
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