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ML925B22F Dataheets PDF



Part Number ML925B22F
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description (ML9xxxx) InGaAsP DFB LASER DIODES
Datasheet ML925B22F DatasheetML925B22F Datasheet (PDF)

MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES TYPE NAME ML925B11F / ML925B16F / ML925B22F ML920J11S / ML920J16S / ML920J22S ML925J11F / ML925J16F / ML925J22F ML920L11S / ML920L16S / ML920L22S APPLICATION ·~1.25Gbps digital transmission system · Coarse WDM application DESCRIPTION ML9XX11, ML9XX16 and ML9XX22 series are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength of.

  ML925B22F   ML925B22F


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MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES TYPE NAME ML925B11F / ML925B16F / ML925B22F ML920J11S / ML920J16S / ML920J22S ML925J11F / ML925J16F / ML925J22F ML920L11S / ML920L16S / ML920L22S APPLICATION ·~1.25Gbps digital transmission system · Coarse WDM application DESCRIPTION ML9XX11, ML9XX16 and ML9XX22 series are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength of 1470 ~ 1610 nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring. FEATURES · Homogeneous grating (AR/HR facet coating) structure DFB · Wide temperature range operation ( 0 to 85ºC ) · Low threshold current (typical 8mA) · High speed response (typical 0.1nsec) · 8 wavelength with 20nm space at 1470 ~ 1610nm · φ5.6mm TO-CAN package · Flat window cap, or Aspherical lens cap ABSOLUTE MAXIMUM RATINGS Symbol Po If www.DataSheet4U.com VRL VRD IFD Tc Tstg Parameter Light output power Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Photo diode) Forward current (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 10 150 2 20 2 0 to +85 -40 to +100 Unit mW mA V V mA ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ] Symbol Ith Iop Vop η λp θ // θ┴ SMSR tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Side mode suppression ratio Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW CW, Tc=85ºC CW, Po=5mW CW, Po=5mW, Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW Tc= 0 to +85ºC Ib=Ith, 20-80% <*> CW, Po=5mW VRD=5V VRD=5V Min. ----------0.20 ----35 Typ. 8 30 25 60 1.1 0.28 <**> 25 35 40 Max. 15 50 40 80 1.5 --35 45 --Unit mA mA V mW/mA nm deg. deg. dB --0.1 0.2 ns 0.05 0.2 --mA ----0.1 µA --10 20 pF <*> Except influence of the 18mm lead. MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S] Symbol Ith Iop Vop η λp SMSR Pf Df tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions Min. Typ. Max. Unit CW --8 15 mA --30 50 CW, Tc=85ºC CW, Po=5mW --25 40 mA --60 80 CW, Po=5mW, Tc=85ºC CW, Po=5mW --1.1 1.5 V CW, Po=5mW 0.20 0.28 --mW/mA CW, Po=5mW nm <**> CW, Po=5mW 35 40 --dB Tc= 0 to +85ºC CW, Po=5mW, SMF 1.5 2.0 --mW CW, Po=5mW, SMF 6.5 7.5 8.5 mm Ib=Ith, 20-80% <*> --0.1 0.2 ns CW, Po=5mW 0.05 0.2 --mA VRD=5V ----0.1 µA VRD=5V --10 20 pF <*> Except influence of the 18mm lead. Limits Min. 1467 1487 1507 1527 1547 1567 1587 1607 Typ. 1470 1490 1510 1530 1550 1570 1590 1610 Max. 1473 1493 1513 1533 1553 1573 1593 1613 <**> Peak wavelength Type ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04 ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05 ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04 ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05 ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06 ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04 ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05 ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06 Symb ol Test condition Unit λp CW Po=5mW Tc=25ºC nm MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change OUTLINE DRAWINGS InGaAsP DFB LASER DIODES ML925B11F ML925B16F ML925B22F ML920J11S ML920J16S ML920J22S Dimension : mm φ5.6 -0.03 φ4.25 Y (0.25) (3) +0 (3) LD Case (1) (2) PD 2-90° (1) (4) (2) X (4) 1±0.1 (0.25) ML925B11F,ML925B16F,ML925B22F 0.25 ±0.03 φ3.55±0.1 (3) LD 1.27 ±0.0 3 Case (Glass) φ2.0Min. φ1.0Min. 2.1±0.1 5 (1) Emitting Facet Reference Plane (2) PD ±0.1 18 ±1 1.2 (4) φ2.0 ±0.25 (P.C.D.) (1) (2) ML920J11S,ML920J16S,ML920J22S 4-φ0.45 ±0.05 Pin Connection ( Top view ) ML925J11F ML925J16F ML925J22F ML920L11S ML920L16S ML920L22S (7.51) Dimension : mm (3) +0 φ5.6 -0.03 Case LD φ4.3 Y (0.25) Top View (3) (1) (2) PD 2-90° (4) (1) (4) (2) X (0.25) ML925J11F,ML925J16F,ML925J22F 1±0.1 φ3.75±0.1 Z (3) LD Case 3.97 ±0.15 1.27 ±0.03 (1) Emitting Facet (2) PD Reference Plane ±0.1 18 ±1 1.2 (4) φ2.0±0..


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