TIM3742-25UL

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-25UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion www.DataSheet4U.com SYMBOL P1dB G1dB IDS1 ∆G CONDITIONS UNIT dBm dB A dB % MIN. 43.5 9.5    -44   TYP. MAX. 44.5 10.5 6.8  38 -47 6.8    7.6 ±0.6   7.6 80 VDS= 10V f = 3.7 to 4.2GHz ηadd IM3 IDS2 ∆Tch Two-Tone Test Po=33.5dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) dBc A °C Drain Current Channel Temperature Rise Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 8.0A VDS= 3V IDS= 80mA VDS= 3V VGS= 0V IGS= -280µA Channel to Case UNIT mS V A V °C/W MIN.  -1.0  -5  TYP. 5000 -2.5 14.4  1.2 MAX.  -4.0   1.5 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from it...