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CDBFR0520L

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0520L (RoHs Device) I O = 500 mA V R = 20 Volts Features Low forw...


Comchip Technology

CDBFR0520L

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0520L (RoHs Device) I O = 500 mA V R = 20 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.006 gram(approx.). 0.040(1.00) Typ. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage Average forward rectified current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR IO 20 20 0.5 5.5 -40 +125 +125 V V A A O 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) I FSM T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Conditions I F = 100mA @Ta = 25 C I F = 500mA @Ta = 25 C I F = 100mA @Ta = 100 C I F = 500mA @Ta = 100 C O V R = 10V @Ta = 25 C O V R = 20V @Ta = 25 C O O O O Symbol Min Typ Max Unit VF 300 385 220 330 75 250 170 22 mV Reverse current Capacitance between terminals Reverse recovery time IR CT Trr uA pF ns f = 1 MHz, and 0 VDC reverse voltage I F = I R = 10mA, Irr x I R , R L = 100ohm REV:A QW-A1...




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