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CDBF0140L

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0140L Io = 100 mA V R = 40 Volt s Features Low forward Vo...


Comchip Technology

CDBF0140L

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Description
SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0140L Io = 100 mA V R = 40 Volt s Features Low forward Voltage (Lead-free Device) 1005(2512) 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.051(1.30) 0.043(1.10) Mechanical data 0.035(0.90) Case: 1005 (2512) Standard package , molded plastic. 0.027(0.70) 0.020(0.50) Typ. Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.012 (0.30) Typ. Polarity: Indicated by cathode band. 0.020(0.50) Typ. Mounting position: Any. Dimensions in inches and (millimeter) Weight: 0.006 gram (approximately). Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RM VR Io I FSM T STG Tj -40 -40 45 40 100 1 +125 +125 V V mA A C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage I F = 100 mA I F = 10 mA Reverse current Capacitance between terminals V R = 10 V f = 1MHz, and 10 VDC reverse voltage Conditions Symbol Min Typ Max Unit VF VF IR CT 6 0.55 0.34 30 V V uA pF REV:A QW-A1014 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0140L) Fig. 1 - Forward characteristics...




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