SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBAF5817-G Thru CDBAF5819-G
Reverse Voltage: 20 - 40 Volts Forwa...
SMD
Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBAF5817-G Thru CDBAF5819-G
Reverse Voltage: 20 - 40 Volts Forward Current: 1A or 3A RoHS Device
Features
For surface mounted applications. Metal to silicon rectifier,majority carrier conduction. Plastic package has Underwriters Lab, flamability classification94V-0. High surge capacity. High current capability, low forward voltage.
0.020(R0.50)
0.091(2.30) 0.083(2.10)
2010
0.002(0.05)
0.181(4.60) 0.173(4.40)
Mechanical data
Case: Packed with FRP substrate and epoxy underfilled. Terminals: Solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band . Weight: 0.02 gram(approx.).
Dimensions in inches and (millimeter)
0.045(1.15) 0.029(0.75)
0.045(1.15) 0.029(0.75) 0.046(1.16) 0.034(0.86)
Maximum Ratings (at T A =25 C unless otherwise noted)
O
Parameter
Max. Repetitive Peak Reverse Voltage Max. DC Bolcking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave suprimposed on rate load (JEDEC method) Max. Average Forward Current Typ ica l The rmal Res ist an ce (Not e 3) St or ag e Temper at ur e Max. Oper at ing Ju nc tion Temper at ur e
Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit
V RRM V DC V RMS 20 20 14 30 30 21 40 40 28 V V V
I FSM
30
A
IO R
JA
1 80 -50 to +1 25 +1 25
O
O
A C/ W
O
T STG Tj
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
Parameter
Max. Forward Voltage at 1.0 A (Note 1) at 3.0 A (Note 1) Max. DC Reverse Current at Rate...