MSC83301
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
REFRACTORY/GOLD METALLIZATION EMI...
MSC83301
RF & MICROWAVE
TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE MSC83301 BRANDING 83301
PIN CONNECTION
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DESCRIPTION The MSC83301 is a common base hermetically sealed silicon
NPN microwave power
transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83301 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 50°C)
6.0 200 30 200 − 65 to +200
W mA V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 25 °C/W
*Applies only to rated RF amplifier operation
September 2, 1994
1/5
MSC83301
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
I C = 1 mA I E = 1 mA I C = 5 mA VCB = 28V VCE = 5 V
IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 100 mA
45 3.5 45 — 30
— — — — —
— — — 0.5 30...