MSC82307
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
PRELIMINARY DATA
REFRACTORY/GOLD M...
MSC82307
RF & MICROWAVE
TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 7.0 W MIN. WITH 9.6 dB GAIN
.250 2LFL (S010) hermetically sealed ORDER CODE MSC82307 BRANDING 82307
PIN CONNECTION
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DESCRIPTION The MSC82307 is a common base hermetically sealed silicon
NPN microwave power
transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 50˚C)
21.4 1.2 26 200 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 7.0 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/3
MSC82307
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA
44 3.5 44 — 30
— — — — —
— — — 0.5 300
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 2.3 GHz f = 2.3 GHz f =...