MSC82306

MSC82306 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY\GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 5.5 W MIN. WITH 9.6 dB GAIN .250 2LFL (S010) hermetically sealed ORDER CODE MSC82306 BRANDING 82306 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82306 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 16.7 900 26 200 − 65 to +200 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 9.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/4 MSC82306 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 400mA 44 3.5 44 — 30 — — — — — — — — 0.5 300 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 2.3 GHz f = 2.3 GH...