MSC82010

MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC82010 BRANDING 82010 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82010 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 35 1.5 35 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 5.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82010 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 5mA IE = 1mA IC = 15mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 1000mA 45 3.5 45 — 15 — — — — — — — — 5.0 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 2.0 G...