MSC81450M

MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LF L (S038) hermetically sealed ORDER CODE MSC81450M BRANDING 81450M PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch at any phase angle under full rated conditions. The MSC81450M is housed in the unique BIGPAC™ package with internal input/output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 910 28 55 250 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.15 °C/W *Applies only to rated RF amplifier operation MSC81450M ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Symbo l T est Con ditio ns Value Min. Typ . Max. Un it BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbo l IC = 15mA IE = 1mA IC = 50mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 1A 65 3.5 65 — 15 — — — — — — — — 35 120 V V V mA — Test Con dition s Value Min . Typ . Max. Unit POUT ηc GP Note: f = 1090 MHz f = 109...