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MSC81402

STMicroelectronics

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS

MSC81402 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS . . . . . PRELIMINARY DATA REFRACTORY/GOL...


STMicroelectronics

MSC81402

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Description
MSC81402 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION HIGH GAIN & COLLECTOR EFFICIENCY RUGGED OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 2.0 W MIN. WITH 10.0 dB GAIN .250 2LFL (S010) hermetically sealed ORDER CODE MSC81402 BRANDING 81402 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81402 is a 28 Volt, Class C, common base NPN biploar device designed for general purpose amplifier applications in the UHF and L-Band frequency range. High gain and collector efficiency along with extreme ruggedness are obtained using a gold metallized emitter-ballasted overlay die geometry. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 50˚C) 6 0.23 30 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 25 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC81402 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 100mA 50 3.5 50 — 30 — — — — — — — — 0.5 300 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 1.4 GHz f = 1.4 GHz f = 1.4 GHz f = 1...




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