Freescale Semiconductor Technical Data
Document Number: MRF5P21045N Rev. 0, 4/2007
RF Power Field - Effect Transistor
...
Freescale Semiconductor Technical Data
Document Number: MRF5P21045N Rev. 0, 4/2007
RF Power Field - Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications. Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 200°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5P21045NR1
2110 - 2170 MHz, 10 W AVG., 28 V 2 x W - CDMA, DUAL PATH LATERAL N - CHANNEL RF POWER MOSFET
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4
RFinA/VGSA 3
2 RFoutA/VDSA
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RFinB/VGSB 4
1 RFoutB/VDSB
(Top View) Note: Exposed backside of the package is the source terminal for the
transistors.
Figure 1. P...
