BFP540FESD

Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier Excellent ESD performance typical value 1000 V (HBM) Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads Qualification report according to AEC-Q101 available BFP540FESD 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540FESD Marking Pin Configuration AUs 1=B 2=E 3=C 4=E - - Package TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 80 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the emitter lead at the soldering point to the pcb Value 4.5 4 10 10 1 80 8 250 150 -55 ... 150 Unit V mA mW °C 1 2013-09-05 BFP540FESD Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 280 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20...