Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier • Excellent ESD performance
ty...
Low Noise Silicon Bipolar RF
Transistor
For ESD protected high gain low noise amplifier Excellent ESD performance
typical value 1000 V (HBM) Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads Qualification report according to AEC-Q101 available
BFP540FESD
3 2
4 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP540FESD
Marking
Pin Configuration
AUs 1=B 2=E 3=C 4=E -
-
Package TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage
Collector current Base current Total power dissipation1) TS ≤ 80 °C Junction temperature Storage temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5 4 10 10 1 80 8 250
150 -55 ... 150
Unit V
mA mW °C
1 2013-09-05
BFP540FESD
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 280
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20...