MGFC41V7177

< C band internally matched power GaAs FET > MGFC41V7177 7.1 – 7.7 GHz BAND / 12W DESCRIPTION The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.) @f=7.1 – 7.7GHz  High power gain GLP=9.5dB (TYP.) @f=7.1 – 7.7GHz  High power added efficiency P.A.E.=33% (TYP.) @f=7.1 – 7.7GHz  Low distortion [ item -51] IM3=-45dBc (TYP.) @Po=30dBm S.C.L. APPLICATION  item 01 : 7.1 – 7.7 GHz band power amplifier QUALITY  IG OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.2 (2) 17.4+/-0.3 8.0+/-0.2 2MIN (3) 20.4+/-0.2 13.4 0.1 2.4+/-0.2 15.8 4.0+/-0.4 1.4 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=3.4A  RG=50ohm Refer to Bias Procedure GF-18 (1): GATE (2): SOURCE (FLANGE) (3):...