MITSUBISHI SEMICONDUTOR
Feb. /2007
MGF4961B
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
Outline Drawing
4. 0±0. 2 (1. 05) 1. 9±0. 1 (1. 05)
(unit: mm)
FEATURES
Low noise figure @ f=20GHz NFmin. = 0. 7dB (Typ. ) High associated gain @ f=20GHz Gs = 13. 5dB (Typ. )
(1. 05)
①
C to K band low noise amplifiers
0. 5±0. 1
③
1. 19±0. 2 0. 125 ±0. 05
QUALITY GRADE
GG GD-31
(1. 05)
APPLICATION
1. 02±0. 1
②
②
1. 9±0. 1
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & r...