MGF0953P

< High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES  High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm  High power gain Gp=16.5dB(TYP.) @f=2.15GHz  High power added efficiency add=40%(TYP.) @f=2.15GHz,Pin=10dBm  Plastic Mold Lead – less Package APPLICATION  For L/S Band power amplifiers QUALITY  GG RECOMMENDED BIAS CONDITIONS  Vds=10V  Ids=0.15A  Rg=1000 Delivery Tape & Reel(1.5K) Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGSO Gate to source breakdown voltage -15 VGDO Gate to drain breakdown voltage -15 ID Drain current 0.4 IGR Reverse gate current -1.25 IGF Forward gate current 5 PT Total power dissipation 6.25 Tch Cannel temperature 150 Tstg Storage temperature -40 to +150 Unit V V A mA mA W C C Electrical characteristics (...