STS1NK60Z

STS1NK60Z N-CHANNEL 600V - 13Ω - 0.25A - SO-8 Zener-Protected SuperMESH™ Power MOSFET TYPE STS1NK60Z VDSS 600 V RDS(on) < 15 Ω ID 0.25 A Pw 2W TYPICAL RDS(on) = 13Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 www.DataSheet4U.com DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) ORDERING INFORMATION SALES TYPE STS1NK60Z MARKING S1NK60Z PACKAGE SO-8 PACKAGING TAPE & REEL June 2003 1/8 STS1NK60Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 600 600 ± 30 0.25 0.16 1 2 0.016 800 4.5 -55 to 150 -55 to 150 Unit V V V A A A W W/°C V V/...